| 摘要 |
An imaging device 1 is equipped with a silicon layer 10, a rewiring layer 20 that includes an insulator having a dielectric constant lower than that of silicon oxide, and a cover glass 40. A cutout portion 19 is made in the silicon layer 10, the cutout portion 19 having wiring 14. At least a portion of the low-dielectric constant rewiring layer 20 exposed in the cutout portion 19 is not covered by the wiring 14. The cutout portion 19 is covered by a second protective film 60 formed from a metal material, over a first protective film 50 formed from an insulating material. |
