FORMATION OF OPENINGS IN INSULATING LAYERS IN MOS SEMICONDUCTOR DEVICES,申请号USD3674551-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	FORMATION OF OPENINGS IN INSULATING LAYERS IN MOS SEMICONDUCTOR DEVICES
摘要
申请公布号	US3674551(A)	申请公布日期	1972.07.04
申请号	USD3674551	申请日期	1970.10.12
申请人	RCA CORP.	发明人	TERRY GEORGE ATHANAS
分类号	H01L21/00;H01L21/32;H01L23/29;H01L23/485;H01L27/00;(IPC1-7):C23F1/02	主分类号	H01L21/00
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Digitally programmable continuously variable precision microwave attenuator

Face recognition system

Method of fabricating color filter

Press-type strapping machine

Voltage source measurement unit with minimized common mode errors

System and method to align clock signals

Semiconductor device having an electronic circuit disposed therein

Cathode active material powder for lithium secondary battery

Image forming apparatus, launching method of program in the apparatus, image forming system, and program and storage medium therefor

Low pressure olefin recovery process

Identification of a JAK2 mutation in Polycythemia Vera

Adjustable bar and fixture box assembly

Multiwell plates with integrated biosensors and membranes

System and method for display stand height adjustment

Method for recovering metal values from concentrates of sulfide minerals

Method for removing at least one area of a layer of a component consisting of metal or a metal compound

Distortion compensating apparatus

Buffer circuit with enhanced overvoltage protection

Acoustic practice percussion instrument and practice kit

Clamping apparatus for fixing a collet to a chuck