发明名称 SEMICONDUCTOR
摘要 PURPOSE:To make it possible to apply glass flow method at lower temperature, by implanting impurity ions into partially or whole region of an insulating layer formed on an oxide film, forming the oxide film made of glass having lower m.p. than the insulating layer and smoothing sholder-shaped portions of the surface of the glass layer by heating.
申请公布号 JPS52104868(A) 申请公布日期 1977.09.02
申请号 JP19760021084 申请日期 1976.03.01
申请人 HITACHI LTD 发明人 SUZUKI KENSUKE
分类号 H01L21/52;H01L23/06;H01L23/29;H01L23/31;H01L23/48 主分类号 H01L21/52
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