| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device containing static random access memory(SRAM) cells and manufacture thereof. SOLUTION: A static random access memory cell comprises a semiconductor substrate 100, two transmission transistors, two drive transistors, two power lines and tow word lines 122. The two transmission transistors and the two drive transistors are formed on the semiconductor substrate 100, using a first conductive film. A conductive film pattern 114 used as the two power lines is formed on four transistors, using a second conductive film and is insulated from the four transistors. The two word lines 122, connected with the gates of the two transmission transistors 104, are formed with the use of a third conductive film on the two power liens 114 using a third conductive film and are insulated form the power liens. Consequently, a parasitic capacitance of the word line 122 is reduced so that the operation speed of the memory device is increased.</p> |
