发明名称 CAPACITOR MATERIAL PROVIDED WITH THIN DIELECTRIC LAYER USED FOR FORMATION OF CAPACITOR LAYER EMBEDDED IN ELECTRONIC COMPONENT, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a capacitor material which is free of fine voids in a layer or of other structural defects. SOLUTION: A capacitor material 8 consists of a first conductive layer 1, a first dielectric layer 2 positioned on the surface of the first conductive layer 1, a second dielectric layer 5 positioned on the first dielectric layer 2 and a second conductive layer 4 positioned on the second dielectric layer 5, and it has a structure, where a dielectric layer consisting of the first dielectric layer 2 and the second dielectric layer 5 is held between the first conductive layer 1 and the second conductive layer 4.
申请公布号 JP2002164253(A) 申请公布日期 2002.06.07
申请号 JP20010250322 申请日期 2001.08.21
申请人 OAK MITSUI INC 发明人 ANDRESAKIS JOHN A;SKORUPSKI EDWARD C;ZIMMERMAN SCOTT;SMITH GORDON
分类号 H01G4/30;H01G4/10;H01G4/18;H01G4/20;H01L25/00;H05K1/16;H05K3/14;(IPC1-7):H01G4/20 主分类号 H01G4/30
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