发明名称 |
CAPACITOR MATERIAL PROVIDED WITH THIN DIELECTRIC LAYER USED FOR FORMATION OF CAPACITOR LAYER EMBEDDED IN ELECTRONIC COMPONENT, AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor material which is free of fine voids in a layer or of other structural defects. SOLUTION: A capacitor material 8 consists of a first conductive layer 1, a first dielectric layer 2 positioned on the surface of the first conductive layer 1, a second dielectric layer 5 positioned on the first dielectric layer 2 and a second conductive layer 4 positioned on the second dielectric layer 5, and it has a structure, where a dielectric layer consisting of the first dielectric layer 2 and the second dielectric layer 5 is held between the first conductive layer 1 and the second conductive layer 4.
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申请公布号 |
JP2002164253(A) |
申请公布日期 |
2002.06.07 |
申请号 |
JP20010250322 |
申请日期 |
2001.08.21 |
申请人 |
OAK MITSUI INC |
发明人 |
ANDRESAKIS JOHN A;SKORUPSKI EDWARD C;ZIMMERMAN SCOTT;SMITH GORDON |
分类号 |
H01G4/30;H01G4/10;H01G4/18;H01G4/20;H01L25/00;H05K1/16;H05K3/14;(IPC1-7):H01G4/20 |
主分类号 |
H01G4/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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