| 摘要 |
PURPOSE:To obtain a barium titanate semiconductor ceramic having a positive resistance-temp. characteristic having a low specific resistance at room temp., high resistance-temp. coefficient and high breakdown voltage. CONSTITUTION:A barium titanate semiconductor ceramic contains BaTiO3 and SrTiO3 as main components, at least one kind selected among rare earth elements La, Sm, Er, etc., and Nb, Bi, Sb, W, Th and Ta, as a semiconductorizer, Mn as a characteristic improver, and SiO2 as a sinter assistant. The Ti to Ba mol-ratio is 1.005-1.027 and the specific surface area of a starting material is 1.0-10.0m<2>/g. |
