发明名称 |
Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof |
摘要 |
The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
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申请公布号 |
US7300808(B2) |
申请公布日期 |
2007.11.27 |
申请号 |
US20040902342 |
申请日期 |
2004.07.29 |
申请人 |
OSRAM GMBH |
发明人 |
ALBRECHT TONY;LINDER NORBERT;LUFT JOHANN |
分类号 |
H01L21/20;H01S5/026;H01S5/04;H01S5/10;H01S5/14;H01S5/183;H01S5/34;H01S5/40 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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