| 摘要 |
The device (100) has a stack of layers comprising a memory layer (106.1) with a base of phase change material placed between two insulation layers (108), where the stack of layers is placed on a substrate (102). A set of columns (110) is arranged in the stack of layers and crosses each layer of the stack. Each column is formed of electrically conducting material. A set of storage elements is formed by annular portions of the memory layer surrounding the columns. An independent claim is also included for a method for forming a multilevel data memorizing device. |
