| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces deterioration in the electrical characteristics of a semiconductor layer due to the floating effect of a substrate and which exhibits superior electrical characteristics, as well as to provide a manufacturing method for such a semiconductor device, an active matrix substrate, an electro-optic device, and an electronic apparatus. SOLUTION: On the semiconductor device, a gate electrode 26 is formed on a substrate body 10A, and a monocrystal semiconductor layer 1 is formed on the gate electrode 26 via insulating layers 2, 11, while a non-monocrystal semiconductor layer 4 is formed which covers at least a channel region 1c on the monocrystal semiconductor layer 1 at the surface on the opposite side of the surface where the gate electrode 26 is formed on the monocrystal semiconductor layer 1. COPYRIGHT: (C)2008,JPO&INPIT |
