FinFETs and methods for forming the same

摘要

A finFET and methods for forming a finFET are disclosed. A structure comprises a substrate, a fin, a gate dielectric, and a gate electrode. The substrate comprises the fin. The fin has a major surface portion of a sidewall, and the major surface portion comprises at least one lattice shift. The at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the sidewall. The gate electrode is on the gate dielectric.

主权项

1. A method comprising:
forming a fin on a substrate; after forming the fin, re-shaping the fin to have a surface portion of each sidewall of the fin with a plurality of lattice shift locations, the surface portion of each sidewall extending from the to of each sidewall, each of the plurality of lattice shift locations comprising an inward or outward shift relative to a center of the fin; forming a dielectric on the surface portion of the sidewall; and forming a gate electrode on the dielectric.