发明名称 Cathodic sputtering of thin layers onto - eg semiconductor elements
摘要 Sputtering takes place under vacuum in the presence of reactive gases supplied through the cathode surface. Spec. the device includes at least one cathode placed opposite one or more carries to be coated. The cathode surface facing the carrier consists of gas-permeable, porous material.
申请公布号 DE1938131(A1) 申请公布日期 1971.01.28
申请号 DE19691938131 申请日期 1969.07.26
申请人 LEYBOLD-HERAEUS GMBH & CO KG 发明人 WALTER,HEINZ;JUSTUS MOLL,DR.
分类号 C23C14/00;C23C14/34 主分类号 C23C14/00
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