| 摘要 |
PURPOSE:To improve resolution and the shape of a pattern by performing a pre-baking process and/or a baking process after exposure for a photo regist composition applied support substrate under a gas environment whose oxygen concentration is equal to or more than 22%. CONSTITUTION:A pre-baking process and/or a baking process after exposure during a pattern forming process are performed under a gas environment whose oxygen concentration is equal to or more than 22%. As photo regist composition, positive photo regist mainly composed of sensitive material in a quinonediazido series and alkali soluble resin are preferable. As sensitive material, 1.2- naphtoquinonediazide-5-sulfonic acid, 1.2-naphtoquinonediazide-4-sulfonic acid and the like shall be used, and as a support substrate, a normal IC manufacturing substrate shall be used. The surface of a photo regist film is hardened, the shape of a pattern is improved, and resolution is also enhanced with the substrate heattreated under an environment where oxygen is highly concentrated. In this case, oxygen concentration shall be within the range of 22 to 50%, and baking temperature shall be within the range of 50 to 150 deg.C. This thereby enables the shape of the pattern and resolution to be much improved. |
