METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of an interface surface between a gate electrode and a gate oxide layer by implanting heavy hydrogen ions into the gate electrode. CONSTITUTION: A gate insulating layer(22) and a gate electrode(23) are sequentially formed on a semiconductor substrate(21). A cap insulating layer(24) is formed on the gate electrode(23). The first impurity area is formed on the semiconductor substrate(21) in both sides of the gate electrode(23). Then, a sidewall spacer(26) is formed at both sides of the gate electrode(23). The second impurity area is formed in the semiconductor substrate(21) except for the gate electrode(23). Heavy hydrogen ions are implanted into the gate electrode(23) with a low temperature and a high energy.