| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal polishing solution for chemical mechanical polishing exhibiting very stable performance after addition of an oxidizer, and to provide a method of preparing the metal polishing solution for chemical mechanical polishing exhibiting very stable performance after addition of the oxidizer by efficiently reducing metal ions using a simple method. SOLUTION: This polishing solution is a metal polishing solution to be used for chemical mechanical polishing of a semiconductor device, and is obtained in such a way that a solution obtained by dissolving at least any one of an organic acid and a passivation film forming agent in ion exchange water is processed with a water-insoluble resin having a group having metal chelate ability to generate≤1 ppm heavy metal ions in terms of solid mass, and abrasive grains and an oxidizer are added to the processed solution. COPYRIGHT: (C)2008,JPO&INPIT |
