Integrated circuit devices including contacts and methods of forming the same

摘要

Integrated circuit devices including contacts and methods of forming the same are provided. The devices may include a fin on a substrate, a gate structure on the fin and a source/drain region in the fin at a side of the gate structure. The devices may further include a contact plug covering an uppermost surface of the source/drain region and a sidewall of the gate structure. The contact plug may include an inner portion including a first material and an outer portion including a second material different from the first material. The outer portion may at least partially cover a sidewall of the inner portion, and a portion of the outer portion may be disposed between the sidewall of the gate structure and the sidewall of the inner portion.

主权项

1. An integrated circuit device, comprising:
a fin on a substrate; first and second gate structures on the fin, wherein sidewalls of the first and second gate structures define a recess therebetween; a source/drain region in the fin between the first and second gate structures; and a contact plug on the source/drain region and in the recess, the contact plug comprising an inner portion comprising a first material and an outer portion comprising a second material different from the first material, wherein: the inner portion of the contact plug contacts the source/drain region; the outer portion at least partially covers a sidewall of the inner portion; and a portion of the outer portion is disposed between the sidewall of the first gate structure and the sidewall of the inner portion.