| 摘要 |
1,179,213. Etching. SIEMENS A.G. 7 June, 1968 [9 June, 1967], No. 27093/68. Heading B6J. In a process for etching one surface of a plate, e.g. a semi-conductor material crystalline plate, such as of silicon, the surface not to be etched is provided with a resist coating which is solid at room temperature by pressing said surface downwardly on to a woven material which has been wetted with the resist by immersion into the resist in a molten state, and the resist is then made to solidify. The plate 9 is held by a suction head 8 while being lowered on to the woven material 4 stretched on a frame 5, which has previously been immersed in the resist 2 in a porcelain dish 1, supported on a heating plate 3. The woven material may be a smooth synthetic resin such as the polycondensation product of adipic acid and hexamethylene diamine, of mesh size 900 microns and thread diameter of 330 microns, or may be a composite material of two layers, the other being of mesh size 250 microns and with the finer weave underneath. The resist may be synthetic or natural wax, e.g. beeswax, having a melting- point below 250‹ C., and is heated in the dish 1 to about 125‹ C. The resist is deposited in a layer of thickness less than 100 microns, e.g. 20 microns, the plate being pressed on to the woven material for about one second. Solidification can be accelerated by blowing on air. |
