| 摘要 |
<p>PURPOSE: To provide an element such as a diode or a cold-cathode-type display device by providing a microvolume portion surrounding a microcathode and sealed by an anode material in a vacuum. CONSTITUTION: One face of an (n)-type silicon substrate 2 is oxidized, at least one aperture 5 is etched in silica 4 on that face, and (p)-type silicon 6 is deposited on the top of the silica 4 and the top of the exposed part of the substrate 2, the silicon 6 being a single crystal 7 inside the aperture 5 and a polycrystal on the silica 4. Next, a dielectric material layer 8 is deposited, an aperture 9 coaxial with the aperture 5 is etched inside the dielectric material layer 8 until reaching the (p)-type silicon layer 6, and after the exposed surface 10 of the (p)-type silicon layer 6 is washed, a process for converting to the condition of negative electron affinity is performed; then, the material of the anode 11 is evaporated as the substrate 2 is rotated about an axis perpendicular to the surface of the substrate 2 in a high vacuum, so as to seal microcavities 9. Therefore, an element such as a diode or other cold-cathode-type display devices can be manufactured without the need to create a high vacuum in a large volume part.</p> |
