A method of measuring pattern shift on a diffused semiconductor wafer after an epitaxial process comprising: measuring a ratio between the line width of a linear pattern vertical to an orientation flat and line width of a linear pattern parallel to the orientation flat to determine the shift between these patterns. <IMAGE>
申请公布号
DE69115446(D1)
申请公布日期
1996.01.25
申请号
DE1991615446
申请日期
1991.09.23
申请人
SHIN-ETSU HANDOTAI CO., LTD., TOKIO/TOKYO, JP
发明人
MIKI, KATSUHIKO, SHIN-ETSU HANDOTAI, C. H. NO. 207, NISHISHIRAKAWA-GUN, FUKUSHIMA-KEN, JP