SUB-MICRON PATTERNING METHOD USING MULTI-LAYER RESIST

摘要

The method for forming fine pattern comprises (a) coating the semiconductor substrate with non-silylated polymer material, (b) coating the polymer material with photoresist and exposing, (c) selectively silylating unexposed part of photoresist by diffusing silicon, and (d) etching non-silylated part of photoresist and polymer material to form desired pattern using silylated part of photoresist as a mask.