FABRICATION OF TFT ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY

摘要

PURPOSE:To enhance productivity by eliminating the conventional need for forming thick semiconductor layer and impurity semiconductor layer while allowing easy isolation thereof between source and drain. CONSTITUTION:(a) A gate electrode 2 is formed on a transparent insulating substrate 1 and patterned. (b) A gate insulator layer 3, a semiconductor layer 4, and an impurity semiconductor layer (n<+>:a-Si) 5 are then formed sequentially thereon. (c) The semiconductor layer 4 and the impurity semiconductor layer 5 are left at the channel part of transistor by patterning. (d) The transparent insulating substrate 1 is set on the anode side and oxygen plasma is generated thus subjecting the impurity semiconductor layer 5 to plasma anodic oxidation. The impurity semi-conductor layer 5 on the channel serves as an insulator layer 6 for isolating the channel. (e) An ITO is deposited and a pixel electrode 7 is formed before a source-drain electrode 8 is formed and patterned.