METHOD OF MANUFACTURING FED

摘要

PURPOSE: A method for manufacturing a field emission display device is provided to enhance a characteristic of a field emission display device by reducing an interval between an emitter and a gate. CONSTITUTION: An oxide layer is formed on a silicon substrate(11). An oxide layer pattern is formed by patterning the oxide layer. An emitter tip is formed by etching a lower silicon substrate(11). An oxide layer(17) is formed on a whole structure of the exposed silicon substrate(11). A photoresist layer is applied thereon. The photoresist layer is removed and a photoresist layer pattern is formed by using a dry-etching method. An oxide layer pattern and the oxide layer(17) of the exposed portion are removed. A metal layer(21) is formed on the whole structure. The photoresist layer is applied on the whole structure. An upper portion of the metal layer is exposed by using the dry-etching method. A tip(18) is exposed by etching a gate metal layer and a gate insulating layer.