FORMATION METHOD OF SEMICONDUCTOR THIN FILM, AND MANUFACTURING METHOD OF THIN-FILM TRANSISTOR BY THE FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To form a polycrystalline semiconductor thin film that maintains an ideal MOS structure interface and at the same time, has a large particle size, and to manufacture a high-performance thin-film transistor by the polycrystalline semiconductor thin film. SOLUTION: This manufacturing method of the thin-film transistor includes a film formation process for forming the semiconductor thin film 5 of a non-single crystal on an insulating substrate 0, a thermal oxidation process for generating an oxide film 3, by allowing the surface of the semiconductor thin film 5 to be subjected to thermal oxidation under 3 pressurized atmosphere containing gas having oxidation capability, and a crystallization process for converting the non-single crystal to a polycrystalline in the semiconductor thin film 5 by applying an energy beam to the semiconductor thin film 5 via the oxide film 3. The energy beam is applied across the oxide film 3, thus forming the flat interface between the semiconductor thin film 3 and oxide film 3. Also, the surface of the semiconductor thin film 5 is subjected to thermal oxidation under the pressurized atmosphere, containing the gas having the oxidation capability, thus nearly discharging hydrogen remaining on the semiconductor thin film 5 by heating. Since nearly no hydrogen remains on the semiconductor thin film 5 at a stage where the energy beam is applied across the oxide film 3, there is no risk of bumping.