| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which reduces a write current. SOLUTION: The semiconductor memory device comprises first and second write wiring lines and a magnetoresistive element 10. The first write wiring line has a first extension extended in a first direction, a first oblique extension 20 connected at its one end with the first extension and also extended in a first oblique direction to the first direction, and a second extension connected at its one end with the other end of the first oblique extension and also extended in the first direction. The second wiring line has a fourth extension extended in a second direction different from the first direction, a third oblique extension 30 connected at its one end with the fourth extension and also extended in a third oblique direction to the second direction, and a fifth extension connected at its one end with the other end of the third oblique direction and also extended in the second direction. At least part of the magnetoresistive element 10 is disposed between the first and third oblique extensions 20 and 30. COPYRIGHT: (C)2006,JPO&NCIPI
|
