NOISELESS BIT LINE AND DUMMY LINE STRUCTURE

摘要

The structure senses the memory cell by comparing the bit line connected to a memory cell array(10) and the reference line connected to a dummy cell(30) through a sense amplifier(60). The reference line has intermediate potential level of the bit line. The size of the MOSFET forming the dummy cell is same to the one of the MOSFET of the memory cell. The potential level of the reference line is controlled according to the number of MOSFET of the dummy cell. The dummy cell uses same earth line(Vss) of the memory(10) and reference cell arrays.