Process and apparatus for measuring, controlling and/or regulating oxygen concentration in silicon melt
摘要
The probe (10) has a metal/metal oxide mixt. (2) sealed in a chamber in a quartz glass tube (1) in contact with an external wire (3) and immersed in the molten Si (4). A thermocouple (6) protected by a quartz glass tube is positioned nearby to indicate temp.. The metal/metal oxide mixt. in the chamber (2) contains O2 at a reference partial pressure. This value is used in conjunction with the voltage Us between the probe (10) and the growing Si crystal (5), the temp. indicated by thermocouple voltage Ut and other known or measurable scientific constants to calculate the mole fraction of the O2 in the molten Si.
申请公布号
EP0696652(A3)
申请公布日期
1996.04.17
申请号
EP19950112274
申请日期
1995.08.04
申请人
MUELLER, GEORG, PROF. DR.
发明人
MUELLER, GEORG, PROF. DR.;MARTEN, RAINER, DIPL. ING.;SEIDL, ALBRECHT, DIPL. ING.