发明名称 METHOD FOR GETTER TREATMENT OF SEMICONDUCTOR PLATES
摘要 FIELD: manufacture of digital devices and integrated circuits. SUBSTANCE: idle side of original substrate plates is irradiated by medium-energy ions and then plates are annealed; prior to irradiating, plates are elastically deformed by bending them so that their effective side becomes convex and then they are subjected to ultrasonic treated, while still deformed, with chemically inactive fluid at frequency of 20-40 kHz for 60-90 min. EFFECT: improved structural perfection of plates due to reducing flaw concentration in them. 1 cl, 1 tbl, 1 ex
申请公布号 RU2137253(C1) 申请公布日期 1999.09.10
申请号 RU19980111469 申请日期 1998.06.15
申请人 NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT IZMERITEL'NYKH;NI SKIJ I IZMERITEL NYKH 发明人 SKUPOV V.D.;SKUPOV A.V.
分类号 H01L21/322;(IPC1-7):H01L21/322 主分类号 H01L21/322
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