CELL WITH UPPER LAYER WIRING TERMINAL

摘要

PROBLEM TO BE SOLVED: To provide an input/output terminal structure of a cell which relaxes limit of driving ability due to electromigration at the output by avoiding electrostatic breakdown of a gate oxide film at the input. SOLUTION: An LSI is provided with a multilayer metallic wiring and consists of a fundamental gate and a large-scale functional gate. Electrostatic breakdown of a gate oxide film due to connection of a long metal wiring is prevented at the input terminal. Limit of driving ability due to electromigration is relaxed at the output terminal by raising the input/output terminal of a fundamental cell and a functional cell constituting an LSI up to an upper layer metal wiring of a thick film in a vertical direction, and connecting each input/output terminal by using mainly a metal wiring of an upper layer, so that a long signal line disposed over a wide range in a chip inside such as a signal line transfer clock and a long signal line connecting large-scale functional cells constituting an LSI can be driven with high driving ability.