| 摘要 |
The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula Al<SUB>x</SUB>Ga<SUB>1-x-y</SUB>In<SUB>y</SUB>N, where 0<=x+y<=1, 0<=x<=1 and 0<=y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer. Formation of such a window layer improves significantly the performance of the nitride laser device according to the invention |
