发明名称 MEMORY SYSTEM BEING CAPABLE OF SELECTING PROGRAM METHOD
摘要 A memory system capable of selecting a programming mode is provided to allow a user to select a programming mode of a flash memory easily to raise a programming speed, reduce a data error and increase data capacity. A memory system(200) includes a flash memory(230), an MLC(Multi Level Cell) mode selector(210), and a memory controller(220). The flash memory stores multi-bit data in a single memory cell. The MLC mode selector generates a mode signal for determining whether memory cells of the flash memory store single-bit data or multi-bit data according to a user's choice. The memory controller controls a programming mode of the flash memory in response to the mode signal generated by the MLC mode selector. The flash memory stores information on the programming mode when a program is executed.
申请公布号 KR20080067834(A) 申请公布日期 2008.07.22
申请号 KR20070005252 申请日期 2007.01.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, BONG RYEOL
分类号 G06F12/00 主分类号 G06F12/00
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