| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for processing and transferring substrates in an epitaxial deposition chamber. SOLUTION: An apparatus and a method are adapted to maximize the throughput of a deposition chamber and to enhance film deposition uniformity. In one embodiment, two substrates 120 are simultaneously processed, by using radiant heating of the substrates 120 in a cold-wall, low-pressure chemical vapor deposition reactor. COPYRIGHT: (C)2008,JPO&INPIT
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