FORMATION METHOD OF INSULATING FILM AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a formation method of an insulating film causing fluorine, HF, or low-molecular fluorocarbons to be eliminated less and having excellent adhesiveness with a film laminated on the insulating film in a manufacturing process of a semiconductor device, and to provide a semiconductor device formed by the formation method. SOLUTION: The formation method of an insulating film has: a process for forming a fluorocarbon film on a substrate; and a process for bringing the surface into contact with processed gas including inorganic fluorinating gas, such as SF6, NF3, SiF4, PF5, and BF3. COPYRIGHT: (C)2008,JPO&INPIT