| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method, which has a high dielectric body as a gate insulating film, and has a proper threshold voltage. SOLUTION: The semiconductor device includes a semiconductor substrate 101, gate insulating films 108, 109 composed of a high dielectric body with high specific inductive capacity higher than a silicon oxide film, being prepared on the semiconductor substrate 101, a first gate electrode 110a for an N-type FET containing an aluminum layer prepared on the gate insulating film, and a second gate electrode 110b for P-type FET composed of Ni<SB>X</SB>Si<SB>Y</SB>(X>Y), being prepared on the gate insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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