发明名称 THIN FILM FABRICATEINGA PPARATUS USEING REMOTE PLASMA
摘要 A thin film-forming apparatus using remote plasma is provided to prevent defects from forming semiconductor thin films by preventing impurities from flowing in a reaction chamber. A thin film-forming apparatus(1) using remote plasma comprises a remote plasma generation part(100), a plasma storage part, and an impure radical purging part(160). The remote plasma generation part generates radical-included plasma. The plasma storage part stores the plasma generated in the remote plasma generation part. The impure radical purging part removes impure radicals from the radical-included plasma discharged from the plasma storage part.
申请公布号 KR20090002597(A) 申请公布日期 2009.01.09
申请号 KR20070066087 申请日期 2007.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JIN HYUK;HAN, MOON HYEONG;KIM, KI HYUN
分类号 C23C16/50 主分类号 C23C16/50
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