发明名称 |
THIN FILM FABRICATEINGA PPARATUS USEING REMOTE PLASMA |
摘要 |
A thin film-forming apparatus using remote plasma is provided to prevent defects from forming semiconductor thin films by preventing impurities from flowing in a reaction chamber. A thin film-forming apparatus(1) using remote plasma comprises a remote plasma generation part(100), a plasma storage part, and an impure radical purging part(160). The remote plasma generation part generates radical-included plasma. The plasma storage part stores the plasma generated in the remote plasma generation part. The impure radical purging part removes impure radicals from the radical-included plasma discharged from the plasma storage part.
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申请公布号 |
KR20090002597(A) |
申请公布日期 |
2009.01.09 |
申请号 |
KR20070066087 |
申请日期 |
2007.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JIN HYUK;HAN, MOON HYEONG;KIM, KI HYUN |
分类号 |
C23C16/50 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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