Sublimation growth of silicon carbide single crystals

摘要

The present invention relates to a method of forming large device quality single crystals of silicon carbide (33). The sublimation process is enhanced by maintaining a constant polytype composition in the source materials (40), selected size distribution in the source materials (40), by specific preparation of the growth surface of seed crystals (32), and by controlling the thermal gradient between the source materials (40) and the seed crystal (32).