| 发明名称 | Photoelectric conversion element | ||
| 摘要 | Disclosed is a photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer includes an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 100 μm2 or more per 1 μm3 of the active layer. | ||
| 申请公布号 | US9362515(B2) | 申请公布日期 | 2016.06.07 |
| 申请号 | US200913002584 | 申请日期 | 2009.07.07 |
| 申请人 | SUMITOMO CHEMICAL COMPANY, LIMITED | 发明人 | Uetani Yasunori;Honda Yoshiaki;Takenaka Yukiko |
| 分类号 | H01L31/102;H01L51/42;B82Y10/00;H01L51/00 | 主分类号 | H01L31/102 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer comprises a mixture of an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 115 to 300 μm2 per 1 μm3 of the active layer, wherein the p-n junction is formed in the active layer by phase separation between the n-type semiconductor and the p-type semiconductor, and wherein the area is determined by a two dimensional observation of an active layer using a transmission electron microscope (TEM). | ||
| 地址 | Tokyo JP | ||