| 发明名称 |
FINFET DEVICE INCLUDING A UNIFORM SILICON ALLOY FIN |
| 摘要 |
A method includes forming at least one fin on a semiconductor substrate. A silicon alloy material is formed on the fin and on exposed surface portions of the substrate. A thermal process is performed to define a silicon alloy fin from the silicon alloy material and the fin and to define silicon alloy surface portions from the silicon alloy material and the exposed surface portions of the substrate. A semiconductor device includes a substrate, a fin defined on the substrate, the fin comprising a silicon alloy and having a substantially vertical sidewall, and silicon alloy surface portions on the substrate adjacent the fin. |
| 申请公布号 |
US2016190323(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514676239 |
申请日期 |
2015.04.01 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Jacob Ajey Poovannummoottil;Fronheiser Jody A.;Akarvardar Murat Kerem;Bentley Steven |
| 分类号 |
H01L29/78;H01L21/324;H01L21/02;H01L29/06;H01L29/161 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
forming at least one fin on a semiconductor substrate; forming a silicon alloy material on said fin and on exposed surface portions of said substrate; and performing a thermal process to define a silicon alloy fin from said silicon alloy material and said fin and to define silicon alloy surface portions from said silicon alloy material and said exposed surface portions of said substrate. |
| 地址 |
Grand Cayman KY |
