| 发明名称 |
ENRICHED, HIGH MOBILITY STRAINED FIN HAVING BOTTOM DIELECTRIC ISOLATION |
| 摘要 |
Embodiments are directed to a method of enriching and electrically isolating a fin of a FinFET. The method includes forming at least one fin. The method further includes forming under a first set of conditions an enriched upper portion of the at least one fin. The method further includes forming under a second set of conditions an electrically isolated region from a lower portion of the at least one fin, wherein forming under the first set of conditions is spaced in time from forming under the second set of conditions. The method further includes controlling the first set of conditions separately from the second set of conditions. |
| 申请公布号 |
US2016190288(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514743504 |
申请日期 |
2015.06.18 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Doris Bruce B.;He Hong;Li Juntao;Wang Junli;Yang Chih-Chao |
| 分类号 |
H01L29/66;H01L29/06 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of enriching and electrically isolating a fin of a fin-type field effect transistor (FinFET), the method comprising:
forming at least one fin; forming under a first set of conditions an enriched upper portion of said at least one fin; and forming under a second set of conditions an electrically isolated region from a lower portion of said at least one fin; wherein said forming under said first set of conditions is spaced in time from said forming under said second set of conditions; and controlling said first set of conditions separately from said second set of conditions. |
| 地址 |
Armonk NY US |
