AIIIBv-Lumineszenzdiode, deren Temperaturkoeffizient dJ/dT der Strahlungsintensität im Zimmertemperaturbereich zwischen 10º und 20º C weniger als 1% beträgt

摘要

1,156,905. Electroluminescence. SIEMENS A.G. 30 Oct., 1967 [31 Oct., 1966], No. 49160/67. Addition to 1,156,904. Heading C4S. [Also in Division H1] A gallium arsenide luminescent diode, the PN junction of which lies in a 100 crystal plane, is formed by alloying to a 100 face of an N-type GaAs wafer a pellet consisting of tin and an acceptor dopant in a weight ratio between 100 and 10 to 1. In the embodiment the junction is made by a press powder alloying process in accordance with the programme illustrated in Fig. 2 (not shown), using a pellet of zinc-tin alloy (or an alloy consisting of at least one Group II metal) and then etching away the non-planar edges of the 30 Á deep junction. An element produced in this way is preferably soldered by a tin-platinum layer 4 to an annular molybdenum contact 3 which carries a metalcapped ceramic tube 5 protecting the junction. The unprotected face of the element is of hemispherical form to reduce internal reflection.