INTEGRATED HIGH-VOLTAGE BIPOLAR POWER TRANSISTOR AND LOW VOLTAGE MOS POWER TRANSISTOR STRUCTURE IN THE EMITTER SWITCHING CONFIGURATION AND RELATIVE MANUFACTURING PROCESS,申请号US19910749251-传众专利搜索

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发明名称	INTEGRATED HIGH-VOLTAGE BIPOLAR POWER TRANSISTOR AND LOW VOLTAGE MOS POWER TRANSISTOR STRUCTURE IN THE EMITTER SWITCHING CONFIGURATION AND RELATIVE MANUFACTURING PROCESS
摘要
申请公布号	US5118635(A)	申请公布日期	1992.06.02
申请号	US19910749251	申请日期	1991.08.23
申请人	SGS-THOMSON MICROELECTRONICS S.R	发明人	FRISINA, FERRUCCIO;FERLA, GIUSEPPE
分类号	H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H01L27/07;H01L29/739;H01L29/78	主分类号	H01L29/73
代理机构		代理人
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地址

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