| 摘要 |
<p>PURPOSE: To obtain a GaN-based semiconductor crystal which is suitable for a blue light-emitting material and which is of good quality by providing a crystal growth method which is improved in such a way that rare-earth 3B perovskite is used as a substrate and that the (c) plane of the GaN-based semiconductor crystal can be grown stably on the 101} plane or the 011} plane of the substrate. CONSTITUTION: A substrate composed of NdGaO3 (neodymium gallate) having a plane orientation of (011) is used, a buffer layer which is composed of GaN formed by an MOCVD method at a temperature of 700 deg.C or lower or of ZnO or In2 O3 which is formed by an RF sputtering method is formed on the substrate, and a GaN-based semiconductor crystal is grown on it. Consequently, the (c) plane of the GaN-based semiconductor crystal is grown stably via the buffer layer on the 101} plane or the 011} plane of a rare-earth group 3B perovskite substrate which is lattice-matched with the GaN-based semiconductor crystal and which is thermally and chemically stable, and the GaN-based semiconductor crystal which is good as a blue light-emitting semiconductor material is obtained.</p> |
