| 发明名称 |
Use of pulsed grounding source in a plasma reactor |
| 摘要 |
A method and apparatus for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
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| 申请公布号 |
US6485572(B1) |
申请公布日期 |
2002.11.26 |
| 申请号 |
US20000649748 |
申请日期 |
2000.08.28 |
| 申请人 |
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发明人 |
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| 分类号 |
H05H1/46;H01J37/32;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/306 |
主分类号 |
H05H1/46 |
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代理人 |
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