| 摘要 |
PROBLEM TO BE SOLVED: To improve accuracy in detecting an alignment mark that is formed at a substrate side, when performing alignment in the case of exposure. SOLUTION: When forming an element separating part 26a in an element forming area 100 formed on an SOI substrate 10, selective oxidization is performed upon a mark forming area 150 to simultaneously form an oxidized part 26b. When forming these element separating part and oxidized part, a silicon-nitride film 22 that has been used as an oxidization blocking mask, is then used as an anti-etching mask in the mark forming area to perform etching upon the oxidized part 26b and a silicon-oxide film 14 to depth such that a first silicon layer 12 is exposed, thereby forming an alignment mark. COPYRIGHT: (C)2005,JPO&NCIPI |
