| 摘要 |
A method for manufacturing a semiconductor device can efficiently form on a substrate an amorphous thin film containing small amounts of impurities without needs for a rapid annealing treatment and a frequent cleaning process. A method for manufacturing a semiconductor device comprises a film-forming step and a film-modifying step. In the film-forming step, a film formation gas from a film formation raw material supply unit 9 is supplied into a reaction chamber 1 through a shower head 6 to form an amorphous thin film including a hafnium oxide film (HfO2 film) on a substrate 4 which is rotating. In the film-modifying step, a radical generated in a reactant activation unit 11 is supplied through the same shower head 6 as used for supplying the film formation gas, so as to remove a specific element which is an impurity in the film formed in the film-forming step. By a controller 25, the film-forming step and the film-modifying step are subsequently repeated two or more times in the same reaction chamber 1 so as to form a semiconductor device. |
