| 摘要 |
An image sensor and a manufacturing method thereof are provided to form a connection part of a photodiode without an additional mask by changing the design of an ion implantation layer for isolating an element of the photodiode. A first ion implantation region(120) is formed on a substrate. A second ion implantation region(130) is formed except an adjacent region of the first ion implantation region edge and the first ion implantation region. A plug(150) is formed on the first ion implantation region.
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