| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of improving optical output, and a method for manufacturing the same.SOLUTION: A method for manufacturing an optical semiconductor device comprises the steps of: forming a clad layer 103 whose composition is represented by AlGaAs(0<x≤0.42) above a GaAs substrate 101; forming a quantum dot active layer 104 including a GaAs barrier layer on the clad layer 103; exposing the clad layer 103 by removing a part of the quantum dot active layer 104 in a plan view; performing annealing at a temperature of 580°C to 680°C in an atmosphere including AsHwhere partial pressure is not less than 1.70 Torr after exposing the clad layer 103; and forming a regrowth layer 105 composed of a compound semiconductor layer different from the quantum dot active layer 104 of the clad layer 103 on the surface exposed from the quantum dot active layer 104 after the annealing.SELECTED DRAWING: Figure 1A |
