| 发明名称 |
Systems and methods for driving a control gate with a select gate signal in a split-gate nonvolatile memory cell |
| 摘要 |
A nonvolatile memory includes a memory array having a plurality of memory cells, a select gate driver configured to provide a select gate voltage to a select gate of a first memory cell of the plurality of memory cells, and a control gate driver configured to use the select gate voltage to provide a control gate voltage to a control gate of a second memory cell of the plurality of memory cells. |
| 申请公布号 |
US9449703(B1) |
申请公布日期 |
2016.09.20 |
| 申请号 |
US201514734736 |
申请日期 |
2015.06.09 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
Roy Anirban;Choy Jon S. |
| 分类号 |
G11C16/04;G11C16/08;G11C5/14;G11C16/30 |
主分类号 |
G11C16/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory comprising:
a memory array having a plurality of memory cells; a select gate driver configured to provide a select gate voltage to a select gate of a first memory cell of the plurality of memory cells; and a control gate driver configured to use the select gate voltage to provide a control gate voltage to a control gate of a second memory cell of the plurality of memory cells. |
| 地址 |
Austin TX US |
