| 摘要 |
The process by which this device is made comprises the implantation of ions into an insulator. Surface charge on the insulator is discharged during implantation by an electron beam or by a thin conductive surface layer previously deposited on the insulator. Ion energy and dose are selected to embed ions into the insulating lattice to a sufficiently high local concentration to produce a zone of lower resistance which is the implanted zone. The dosage which presently appears to be a minimum dosage for providing a conductive zone in the insulative body is the order of 1018 ions per square centimeter. Beam currents upward from 10 microampers per centimeter square implanted areas are satisfactory. |
