| 摘要 |
PURPOSE:To prevent the oxidation of an active region by a method wherein a polycrystalline Si film and a phosphorus glass film are successively deposited on the main surface of a semiconductor substrate, the Si films are all changed into Si dioxide by heat treatment under high pressure, and at the same time the phosphorus glass film is made to flow. CONSTITUTION:The semiconductor device consists of the P type Si substrate 1, the Si dioxide film 5 formed by selective oxidation, a gate oxide film 6, a polycrystalline Si electrode 7 doped with phosphorus, and an N<+> diffused layer 8 formed by arsenic ion implantation. Next, a polycrystalline Si film 13 is deposited over the surface to the thickness of 1,000Angstrom . Thereafter, the phosphorus glass layer 9 is deposited by a vapor growing method, and, when it is treated in high pressure steam atmosphere, the surface of the phosphorus layer 9 flows and becomes smooth. At the same time, water molecules infiltrating through the phosphorus glass layer 9 are all consumed to oxidize the polycrystalline Si film 13 into an Si diode film 14. However, the surfaces of the Si electrode 7 and the source-drain diffused region 8 are not oxidized. |
