| 摘要 |
PURPOSE:To readily mass produce a charge transfer complex metal in a short time by forming a complex comprising a donor molecule and an acceptor molecule on a substrate by vapor phase method and then annealing the complex in a specific temperature range. CONSTITUTION:In obtaining a charge transfer complex metal by using a vapor phase reaction device consisting of a reaction tube 1 made of pyrex glass, a ceramic tube 2 to support the reaction tube, an electric furnace 3 and a chromel-alumel thermocouple 7 to monitor temperature, first, a donor molecular crystal D and an acceptor molecular crystal A are fed to pyrex glass tubes 5 and 6, respectively. Position relationship of height is determined by vaporization base (sublimation temperature) of molecule, the reaction tube 1 is evacuated, optimum temperature is set depending upon sublimation temperature of each molecule and DxAy complex crystal 4 having 100-200mum width and 1mm height is obtained on a Teflon substrate 8 in about one hours. The crystal is annealed by a muffle furnace at 100-150 deg.C for 2 hours to give the objective substance. |
