摘要 |
<p>PROBLEM TO BE SOLVED: To provide equipment for depositing a film in which, when depositing the film, the stagnation of a gaseous starting material and the generation of by-products is prevented, and thus the deposited film with uniform quality and thickness can be obtained. SOLUTION: In a parallel planar type plasma CVD system in which, while the inside of a discharge vessel is exhausted, a gaseous starting material is introduced therein, and plasma is generated at the inside of the discharge vessel to decompose the gaseous starting material, so that the deposited film is deposited on the surface of a substrate, the exhaust port of a gaseous starting material exhausting means has an opening with a horizontal width larger than that of a parallel planar type electrode.</p> |